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| 3MBI150U-120 IGBT Module U-Series Features * High speed switching * Voltage drive * Low inductance module structure 1200V / 150A 3 in one-package Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1200 20 200 150 400 300 150 300 735 +150 -40 to +125 2500 3.5 Unit V V A Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 1 device W C VAC N*m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : 2.5 to 3.5 N*m(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=150mA VGE=15V, IC=150A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=600V IC=150A VGE=15V RG=2.2 VGE=0V IF=150A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.15 - 2.40 - 1.75 - 2.00 - 17 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 2.00 - 2.10 - 1.60 - 1.70 - - - 2.4 Unit Max. 1.0 200 8.5 2.50 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.30 - 1.90 - 0.35 - mA nA V V Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=150A s m *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.05 Unit Max. 0.17 0.28 - C/W C/W C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 3MBI150U-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 400 400 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip VGE=20V 300 Collector current : Ic [A] 15V 12V 300 Collector current : Ic [A] VGE=20V 15V 12V 200 10V 200 10V 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 400 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip Collector - Emitter voltage : VCE [ V ] 300 Collector current : Ic [A] T j=25C T j=125C 8 6 200 4 100 2 Ic=300A Ic=150A Ic= 75A 5 10 15 20 25 0 0 1 2 3 4 0 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25C 100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=600V, Ic=150A, Tj= 25C Capacitance : Cies, Coes, Cres [ nF ] Cies 10.0 VGE Cres 1.0 Coes VCE 0 0 200 400 600 800 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 3MBI150U-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=2.2, Tj= 25C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=2.2, Tj=125C 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 50 100 150 200 250 300 Collector current : Ic [ A ] 10 0 50 100 150 200 250 300 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 30 25 20 15 10 5 0 0.1 1.0 10.0 100.0 1000.0 0 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=2.2 Eoff(125C) Eon(125C) ton toff 1000 Eoff(25C) Eon(25C) tr 100 tf Err(125C) Err(25C) 10 100 200 300 Gate resistance : Rg [ ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj= 125C 125 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 100 Collector current : Ic [ A ] 300 400 Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 2.2 ,Tj <= 125C 75 200 50 Eoff 25 Err 0 0.1 1.0 10.0 100.0 1000.0 Gate resistance : Rg [ ] 100 0 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] 3MBI150U-120 IGBT Module Forward current vs. Forward on voltage (typ.) chip 400 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 350 Forward current : IF [ A ] 300 250 200 Tj=125C 150 100 50 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 Tj=25C 1000 Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=2.2 100 trr (125C) Irr (125C) Irr (25C) trr (25C) 100 200 300 Forward current : IF [ A ] Transient thermal resistance (max.) 1.000 Thermal resistanse : Rth(j-c) [ C/W ] FWD IGBT 0.100 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] 3MBI150U-120 Outline Drawings, mm M634 IGBT Module ( ) shows reference dimension. Equivalent Circuit Schematic 16,17,18 13,14,15 10,11,12 1 2 7,8,9 3 4 5 6 |
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